Keynote Speaker  I

                                                                                                                              Dimosthenis Peftitsis

                                                                                                              Eindhoven University of Technology, Netherlands

Title: Silicon Carbide Power Electronics: Gate Driving Innovations, Applications, and the Road Ahead

Bio:Dimosthenis Peftitsis (Senior Member, IEEE) born in Kavala, Greece, he received the Diploma degree (Hons.) in electrical and computer engineering from Democritus University of Thrace, Xanthi, Greece, in 2008, and the Ph.D. degree in power electronics with the KTH Royal Institute of Technology, Stockholm, Sweden, in 2013.

He is currently a Professor of power electronics with the Department of Electric Energy, Norwegian University of Science and Technology (NTNU), Trondheim, Norway, where he has been a Faculty Member since 2016. In September 2026, Dr. Peftitsis will join the Department of Electrical Engineering at Eindhoven University of Technology (TU/e) as Full Professor on heterogeneous integration in WBG power electronics. 

In his final year of studies, he spent six months in ABB Corporate Research, Västerås, Sweden, writing his thesis. He was a Postdoctoral Researcher involved in the research on SiC converters with the Department of Electrical Energy Conversion, KTH Royal Institute of Technology (2013/14). He also worked as a Postdoctoral Fellow with the Lab for High Power Electronics Systems, ETH Zurich, where he was involved in dc-breakers for multiterminal HVDC systems from 2014 to 2016. He has authored or coauthored more than 130 journal and conference papers; he is the co-author of one book chapter and the presenter of six conference tutorials. His research interests lie in the area of intelligent power converters design using WBG devices (e.g., SiC and GaN) including adaptive drive circuits, dc-breaker design for MV and HVDC systems, as well as reliability assessment and lifetime modeling of high-power semiconductor devices, including reliability of SiC power switches. Dr. Peftitsis was a member of the Outstanding Academic Fellows Programme at NTNU in 2019-2023, a member of the EPE International Scientific Committee in 2017-2025, an Academic Advisor for the Power Electronic Conversion Technology Annex (PECTA) at IEA and currently serves as the Chairman on the Norway IEEE joint Power Electronics Society/Industry Applications Society/Industrial Electronics Society Chapter. Dr. Peftitsis has been awarded an ERC Consolidator Grant in 2025, and he is the recipient of the Outstanding Reviewer Award 2024 in IEEE Transactions on Power Electronics. Dr. Peftitsis is an Associate Editor for IEEE Transactions on Power Electronics since 2024.

Keynote Speaker  II

                                                                                                                                     Xiaolin Ding

                                                                                                                                 National Grid, UK

Title: TBC